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CGB 240B Datasheet
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Description:
The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth class 1 applications and thus can be used in dual-mode (Bluetooth/WLAN) applications, too. While providing an effective channel power of 22dBm, the ACPR is better than -33dB relative to the sinx/x spectral peak of an IEEE802.11b-modulated TX signal. Each CGB240B chip is individually tested for IP3, resulting in guaranteed ACPR performance. In a Bluetooth class 1 system, the CGB240B's high power added efficiency (up to 50%) and single positive supply operation makes the device ideally suited for handheld applications. The CGB240B delivers 23 dBm output power at a supply voltage of 3.2 V, with an overall PAE of 50% in saturated mode. The output power can be adjusted using an analog control voltage (VCTR). Simple external input-, interstage-, and output matching circuits are used to adapt to the different requirements of linearity and harmonic suppression in various applications2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications.
Applications:
* * * WLAN IEEE 802.11a Bluetooth Class 1
Package Outline:
1
5 P-TSSOP-10-2
Features:
* Pout = +23dBm at 3.2 V * ACPR / IP3 tested to be compliant with IEEE802.11b standard * Fully compliant with Bluetooth requirements (dual-mode use) * Single voltage supply * Wide operating voltage range 2.0 - 5.5 V * Analog power control with four power steps * Easy external matching concept Pin configuration:
1 & 2: 3: 4, 5, & 10: 6: 7: 8 & 9: 11 (paddle) Vc1 RFin NC Vcntrl1 Vcntro2 Vc2 GND
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CGB240B Datasheet
Absolute Maximum Ratings:
Parameter
Max. Supply Voltage CW Max. Supply Voltage Pulsed Max. Control Voltage Max. Current Stage 1 Max. Current Stage 2 Max. Total Power Dissipation ) Max. RF Input Power 2) Max. RF Output Power
2) 1
Symbol min.
VCC, MAX VCCP, MAX VCTR, MAX IC1, MAX IC2, MAX PTOT PIN, MAX POUT, MAX TA TCh TStg - 55 - 40
1)
Limit Values max.
5.5 5.0 3.5 40 180 650 +10 +25 +85 150 150 0 0 0 0 0
Unit
V V V mA mA mW dBm dBm C C C
Operating Temperature Range Max. Junction Temperature Storage Temperature
1 2
) Thermal resistance between junction and pad 11 ( = heatsink ): RTHCH = 100 K/W. ) No RF input signal should be applied at turn on of DC Power. An output VSWR of 1:1 is assumed.
Typical Electrical Characteristics of CGB240B for IEEE802.11b Applications
(Typical data for CGB240B reference application board, see application note 1 ) TA = 25 C; VCC = VCTR= 3.3 V; f = 2.45 GHz; ZIN,Board = ZOUT,Board = 50 Ohms Parameter
Supply Current Small-Signal Operation Power Gain Small-Signal Operation Adjacent Channel Power Ratio
Symbol
ICC, SS GSS ACPR
Limit Values min typ
190 28 - 33
Unit
mA dB dBr
Test Conditions
PIN = - 10 dBm PIN = - 10 dBm POUT = +22dBm f = fC f MOD fC = 2.4..2.5 GHz f MOD= 11..22 MHz. ACPR < -33dBr POUT = +22dBm
max
Output Power Power Added Efficiency
POUT PAE
+22 25
dBm %
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CGB240B Datasheet
Electrical Characteristics of CGB240B Device used in Bluetooth PA Reference Design (See Application Note 2)
TA = 25 C; VCC = 3.2 V; f = 2.4 ... 2.5 GHz; ZIN,Board = ZOUT, Board = 50 Ohms
Parameter
Supply Current Small-Signal Operation Power Gain Small-Signal Operation Output Power Power Step 1 Supply Current Power Step 1 Power Added Efficiency Power Step 1 Output Power Power Step 2 Supply Current Power Step 2 Power Added Efficiency Power Step 2 Output Power Power Step 3 Supply Current Power Step 3 Power Added Efficiency Power Step 3 Output Power Power Step 4 Supply Current Power Step 4 Power Added Efficiency Power Step 4 2nd Harm. Suppression Power Step 4 3rd Harm. Suppression Power Step 4
Symbol
ICC,SS GSS POUT,1 ICC,1 PAE 1 POUT,2 ICC,2 PAE 2 POUT,3 ICC,3 PAE 3 POUT,4 ICC,4 PAE 4 h2 h3
Limit Values min
100 23
Unit
mA dB dBm mA % dBm mA % dBm mA %
Test Conditions
PIN = - 10 dBm VCTR = 2.5 V PIN = - 10 dBm VCTR = 2.5 V PIN = + 3 dBm VCTR = 1.15 V PIN = + 3 dBm VCTR = 1.15 V PIN = + 3 dBm VCTR = 1.15 V PIN = + 3 dBm VCTR = 1.3 V PIN = + 3 dBm VCTR = 1.3 V PIN = + 3 dBm VCTR = 1.3 V PIN = + 3 dBm VCTR = 1.5 V PIN = + 3 dBm VCTR = 1.5 V PIN = + 3 dBm VCTR = 1.5 V PIN = + 3 dBm VCTR = 2.5 V PIN = + 3 dBm VCTR = 2.5 V PIN = + 3 dBm VCTR = 2.5 V PIN = + 3 dBm VCTR = 2.5 V PIN = + 3 dBm VCTR = 2.5 V
typ
130 25 7 15 10 12 25 20 17 52 32
max
150 27
22
23 130
24
dBm mA
40
50 - 35 - 50
-
% dBc dBc
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CGB240B Datasheet
General Electrical Characteristics of CGB240B
Parameter
Turn-Off Current
Symbol
ICC, OFF
Limit Values min typ max
1
Unit
uA
Test Conditions
VCC = 3.2 V VCTR < 0.4 V No RF Input PIN = + 3 dBm VCTR = 0 V VCC = 5.0 V VCTR = 0 to 1V Step VCC = 5.0 V VCTR = 0 to 3V Step VCC = 5.0 V VCTR = 1 to 0V Step VCC = 5.0 V VCTR = 3 to 0V Step PIN = + 5 dBm VCC = 4.8 V VCTR = 2.5 V ZIN = 50 Ohms
Off-State Isolation Rise Time 1 3) Rise Time 2 3) Fall Time 1 3) Fall Time 2 3) Maximum Load VSWR allowed for 10s (no damage to device)
3
S21, 0 TR1 TR2 TF1 TF2 VSWR
26 1 1 1 1 6
dB s s s s
) Rise time TR defined as time between turn-on of VCTR voltage until reach of 90% of full output power level. Fall time TF defined as time between turn-off of VCTR voltage until reach of 10% of full output power level. Please note: Reduced Vccp, max for pulsed operation applies (see "absolute maximum ratings").
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CGB240B Datasheet
Typical S-Parameters for IEEE802.11b Operation
TA = 25 C; VCC = 3.3 V; VCTR = 3,3 V; Port 1: RF In (Pin 3); Port 2: RF Out (Pins 8/9) PIN < - 10 dBm; Interstage match and DC bias circuit according to application note 1.
Frequency (GHz) 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 2,2 2,3 2,4 2,5 2,6 2,8 3 3,2 3,4 3,6 3,8 4 S11 Real (x1) 0,31 0,29 0,17 0,04 -0,06 -0,16 -0,27 -0,37 -0,47 -0,57 -0,67 -0,70 -0,73 -0,74 -0,74 -0,69 -0,63 -0,53 -0,41 -0,30 -0,21 -0,12 Imag (x1) -0,10 -0,22 -0,31 -0,34 -0,35 -0,35 -0,34 -0,32 -0,27 -0,22 -0,11 -0,04 0,04 0,12 0,21 0,36 0,51 0,63 0,72 0,77 0,80 0,82 Real (x1) 10,46 2,51 6,10 8,57 9,25 8,65 7,17 5,11 2,70 -0,36 -3,71 -5,32 -6,88 -8,18 -9,23 -10,40 -10,94 -10,59 -9,16 -7,78 -6,26 -4,62 S21 Imag (x1) -2,89 0,20 1,73 -0,46 -3,27 -6,18 -8,66 -10,46 -11,63 -12,67 -12,10 -11,58 -10,53 -9,49 -8,10 -4,99 -2,12 0,72 3,05 4,53 5,45 6,47 Real (x1) 0,0002 0,0001 -0,0004 -0,0001 0,0003 0,0004 0,0007 0,0008 0,0012 0,0026 0,0025 0,0026 0,0026 0,0034 0,0033 0,0044 0,0053 0,0061 0,0084 0,0088 0,0105 0,0119 S12 Imag (x1) 0,0001 0,0003 0,0015 0,0017 0,0022 0,0028 0,0030 0,0034 0,0043 0,0046 0,0051 0,0049 0,0048 0,0051 0,0055 0,0059 0,0066 0,0067 0,0070 0,0050 0,0051 0,0033 Real (x1) -0,47 -0,60 -0,61 -0,60 -0,59 -0,57 -0,56 -0,55 -0,54 -0,50 -0,47 -0,46 -0,44 -0,43 -0,41 -0,35 -0,30 -0,24 -0,17 -0,12 -0,04 0,06 S21 Imag (x1) -0,02 0,05 0,11 0,16 0,20 0,22 0,24 0,26 0,30 0,32 0,34 0,36 0,37 0,39 0,41 0,44 0,48 0,50 0,50 0,51 0,51 0,47
Note: Table available as S2P file.
CGB240B
RF signal layer RF ground plane Gnd via Reference planes for impedance measurements
200m FR4 epoxy substrate
Figure 1 Ground plane configuration and impedance reference planes. The impedance reference plane is located at the center of the device pin, assuming that a continuous microstrip ground plane exists and that low-inductance (e.g. 6-via) connections of the device's center ground pad (11) to the microstrip ground plane are present.
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CGB240B Datasheet
Operational Impedances for Bluetooth Application TA = 25 C; VCC = 2.8 to 3.2 V; VCTR = 2.5 to 2.8 V; f = 2.4 ... 2.5 GHz PIN = + 3 dBm (Large signal operation; PA in compression) Parameter (Target Data) Generator Impedance ) Interstage Termination ) Load Impedance
4 5 5 4
Symbol ZGEN ZIS ZLOAD
Typ. Value 9-j1 1 + j 12.5 15 + j 3
Unit Ohms Ohms Ohms
) Generator impedance equals approximately conjugate complex input impedance: ZIN ZGEN* ) ZIS is the impedance to be presented to the interstage output (pin 1 and pin 2) of the device.
The given load impedance is optimized for output power in saturated mode (Bluetooth) and does not represent the conjugate complex output impedance of the device since large signal conditions apply.
CGB240B
RF signal layer RF ground plane Gnd via Reference planes for impedance measurements
200m FR4 epoxy substrate
Figure 2 Ground plane configuration and impedance reference planes. The impedance reference plane is located at the center of the device pin, assuming that a continuous microstrip ground plane exists and that low-inductance (e.g. 6-via) connections of the device's center ground pad (11) to the microstrip ground plane are present.
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CGB240B Datasheet
Typical Device Performance for IEEE802.11b Reference Design (see Application Note 1) Valid for all plots: TA = 25 C; VCC = 3.3 V; VCTR = 3.3 V; f = 2.45 GHz; Output Power Compression POUT = f ( PIN )
25 dBm 24 Typical ACPR of Output Signal -25 -20 dBr
ACPR for IEEE802.11b Modulation ACPR IEEE802.11b = f ( POUT )
Output Power
23
-30 -33 dBr -35
22
21
20 -10 -8 -6 -4 Input Power -2 dBm 0
-40 20 21 22 Output Power 23 dBm 24
Optimum Input Power PIN = f ( T ) ACPR IEEE802.11b< -33dBr, POUT>22dBm
-5 dBm Optimum input power for ACPR <-33dBr
Output Power POUT = f ( T ) ACPR IEEE802.11b< -33dBr
22,5 dBm
-5,5 Pout with ACPR <-33dBr -40 -20 0 20 Temperature 40 60 C 80
22
-6
21,5
-6,5
21
-7
20,5 -40 -20 0 20 Temperature 40 60 C 80
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CGB240B Datasheet
Typical Device Performance for Bluetooth Reference Design (see Application Note 2) Valid for all plots: TA = 25 C; VCC = 3.2 V; VCTR = 2.5 V; f = 2.4 ... 2.5 GHz; Efficiency PAE = f ( VCC ) PIN = +3dBm
60,0 % 55,0
Output Power POUT = f ( VCC ) PIN = +3dBm
25,0 dBm 23,0
Power Added Efficiency PAE
50,0 Output Power Pout V 5,0 21,0
45,0
19,0
40,0
35,0
17,0
30,0 2,0 3,0 4,0 Supply Voltage Vcc
15,0 2,0 3,0 4,0 Supply Voltage Vcc V 5,0
Supply Current ICC = f ( VCTR ) PIN = +3dBm
140,0 mA 120,0 Vcc=3.2V
Output Power POUT = f ( VCTR ) PIN = +3dBm
25,0 dBm 20,0 Vcc=2.8V Vcc=3.2V
100,0 Supply Current Icc Output Power Pout 3,0
15,0
80,0 Vcc=2.8V 60,0
10,0
5,0
40,0
0,0
20,0
-5,0
0,0 1,0 1,5 Vctr 2,0 2,5 V
-10,0 1,0 1,5 Vctr 2,0 2,5 V 3,0
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CGB240B Datasheet
Typical Device Performance for Bluetooth Reference Design (cont.) Output Power Compression POUT = f ( PIN ) Supply Current ICC = f ( TA ) PIN = +3dBm, Vcc = 3.2V
150
Vcc=3.2V 20,0
25,0 dBm
mA 140
Output Power Pout
15,0
Vcc=2.8V
Total Supply Current Icc
130
10,0
120
5,0
110
0,0 -20,0
100
-15,0 -10,0 -5,0 Input Power Pin 0,0 dBm 5,0
-40
-20 0 20 40 Ambient Temperature Ta
60
80 Deg C
Output Power POUT = f ( TA ) PIN = +3dBm
25 dBm 24 30 dB 28
Small-Signal Gain S21 = f ( TA ) PIN = -10 dBm, Vcc = 3.2V
Output Power Pout
23 SS Gain -40 -20 0 20 40 Ambient Temperature Ta 60 80 Deg C
26
22
24
21
22
20
20 -40 -20 0 20 40 Ambient Temperature Ta 60 80 Deg C
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CGB240B Datasheet
Pinning
1
5 P-TSSOP-10-2
Figure 3
Pad
1 2 3 4 5 6 7 8 9 10 11
CGB240B Outline
Symbol
VC1 VC1 RFIN N.C. N.C. VCTR1 VCTR2 VC2 VC2 N.C. GND RF and DC ground (pad located on backside of package) Heatsink. Thermal resistance between junction - pad 11: RTHCH = 100 K/W. Control voltage 1st stage Control voltage 2nd stage Supply voltage of 2nd stage / RF output Supply voltage of 2nd stage / RF output
Function
Supply voltage of 1st stage / interstage match Supply voltage of 1st stage / interstage match RF input
Functional Diagram
(1,2) Vc1 (3) RFin (6) Vctr1 (7) Vctr2 (8,9) Vc2 (11) Gnd
Figure 4
CGB240B Functional Diagram
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CGB240B Datasheet
Application Note 1: High Power 22dBm IEEE802.11b Power Amplifier
Vcc R1 C5 TRL2 C1 RF In C4
5 11 6
C6 L1 TRL3 C2 RF Out C3 C7
CGB240B TRL1
1 10
Vctr
Figure 5
IEEE802.11b WLAN Power Amplifier.
Part
C1 C2 C3 C4 C5 C6 C7 L1 R1 TRL1 ) TRL2
8 8) 6
Type
Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Inductor Resistor Microstrip Line Microstrip Line Microstrip Line
Value
22 pF 22 pF 1.5 pF 2.2 pF 82 pF 1 F 1 nF 22 nH 10
Outline
0402 0402 0603 0402 0402 0603 0402 0603 0402
Source
Murata COG Murata COG AVX ACCU-P Murata COG Murata COG Murata X7R Murata X7R Toko Mira
Part No.
06035J1R5BBT
LL1608-FS
l = 2,5 mm; FR4: r = 4.8; h = 0,2 mm; w = 0,32 mm l = 1,0 mm; FR4: r = 4.8; h = 0,2 mm; w = 0,32 mm l = 2,8 mm; FR4: r = 4.8; h = 0,2 mm; w = 0,32 mm
TRL3 8)
) Line length measured from corner of capacitor to end of MMIC's lead.
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CGB240B Datasheet
R 1 C6 L1
C5 C1 CGB240B C 4
C 3
C2
White Dots" = Ground Vias
C7
RF In (SMA)
RF Out (SMA)
Figure 6
Layout of CGB240B evaluation board tuned for IEEE802.11b WLAN application (see application note 1).
Vc1 and Vc2 are connected together on the PCB. Vctr1 and Vctr2 are connected together on the PCB.
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CGB240B Datasheet
Application Note 2: Bluetooth PA Reference Design using CGB240B
Vcc R1 C5 TRL2 C1 RF In C4
5 11 6
C6 L1 TRL3 C2 RF Out C3 C7
CGB240B TRL1
1 10
Vctr
Figure 7
Schematic of Bluetooth PA reference design using CGB240B.
Part
C1 C2 C3 ) C4 C5 C6 C7 L1 R1 TRL1 ) TRL2 8) TRL3
7 8) 8 7
Type
Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Inductor Resistor Microstrip Line Microstrip Line Microstrip Line
Value
22 pF 22 pF 1.5 pF 2.2 pF 10 pF 1 F 1 nF 22 nH 10
Outline
0402 0402 0603 0402 0402 0603 0402 0603 0402
Source
Murata COG Murata COG AVX ACCU-P Murata COG Murata COG Murata X7R Murata X7R Toko Mira
Part No.
06035J1R5BBT
LL1608-FS
l = 2,5 mm; FR4 - r = 4.8; h = 0,2 mm; w = 0,32 mm l = 1,8 mm; FR4 - r = 4.8; h = 0,2 mm; w = 0,32 mm l = 4,0 mm; FR4 - r = 4.8; h = 0,2 mm; w = 0,32 mm
) Cost optimization might take place by using lower-Q AVX-CU capacitors instead of the AccuP version. This will lead to better h2 performance, however resulting in a loss of about 2% PAE. 8 ) Line length measured from corner of capacitor to end of MMIC's lead.
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CGB240B Datasheet
R 1 C6 L1 C5
C1
CGB240B C 4
C 3
C2
White Dots" = Ground Vias
C7
RF Out (SMA)
Figure 8
Layout of CGB240B evaluation board using TRL matching (see application note 2).
Vc1 and Vc2 are connected together on the PCB. Vctr1 and Vctr2 are connected together on the PCB.
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CGB240B Datasheet
Application Note 3: CGB240B as Bluetooth Power Amplifier using a Lumped Element Matching Concept Vcc
C8 L1 L4 C1 RF In C4 C5
5 11 6
C6
L2
CGB240B
1 10
L3
C2 RF Out C3
C7
Vctr Figure 9 CGB240B Bluetooth amplifier using lumped element matching.
Part
C1 C2 C3 C4 C5 C6 C7 C8 L1 L2 L3 L4 R1
Type
Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Inductor Inductor Inductor Inductor Jumper
Value
22 pF 22 pF 1.5 pF 2.0 pF 82 pF 0.1 F 1 nF 0.1 F 22 nH 1.0 nH 1.0 nH 22 nH 0
Outline
0402 0402 0603 0402 0402 0603 0402 0603 0603 0402 0402 0603 0402
Source
Murata COG Murata COG AVX ACCU-P Murata COG Murata COG Murata X7R Murata X7R Murata X7R Toko Coilcraft Coilcraft Toko
Part No.
06035J1R5BBT
LL1005-FH22NJ 0402CS-1N0X_BG 0402CS-1N0X_BG LL1005-FH22NJ
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CGB240B Datasheet
C8 L4 C5 C1 C 4 L2 CGB240B
R1
C6 L1 L3 C 3 C2
White Dots" = Ground Vias
C7
RF In (SMA)
RF Out (SMA)
Figure 10
Bluetooth PA with lumped element matching (see application note 3).
A the discrete matching concept shown in figure 10 uses no transmission lines but only discrete components to provide device matching. The use of a discrete matching concept saves PCB space an makes the design more tolerant towards variations of the PCB's r , but will lead to a lower output power (typ. 0.3 dB lower) and higher BOM cost.
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CGB240B Datasheet
Description of P-TSSOP-10-2 Package
In order to ensure maximum mounting yield and optimal reliability, special soldering conditions apply in volume production. Please ask for our information brochure on details or download the related document (TSSOP10_Soldering_Version01.pdf) from our website. The P-TSSOP-10-2 is a level 3 package. International standards for handling this type of package are described in the JEDEC standard J-STD-033 STANDARD FOR HANDLING, PACKING, SHIPPING AND USE OF MOISTURE/REFLOW SENSITIVE SURFACE-MOUNT DEVICES", published May-1999. The original document is available from the JEDEC website www.jedec.org . MSL Rating: 1/260C Pb Free
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CGB240B Datasheet
Part Marking:
Part Orientation on Reel:
Ordering Information:
Type
CGB240B
Marking
CGB240B
Ordering Code
t.b.d.
Package
P-TSSOP-10-2
ESD: Electrostatic discharge sensitive device Observe handling precautions!
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CGB240B Datasheet
Published by TriQuint Semiconductor GmbH, Marketing, Konrad-Zuse-Platz 1, D-81829 Munich. copyright TriQuint Semiconductor GmbH 2003. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of TriQuint Semiconductor in Germany or the TriQuint Semiconductor Companies and Representatives worldwide. Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest TriQuint Semiconductors Office.
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